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4v drive nch + pch mosfet MP6M14 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) low voltage drive(4v drive). ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 1000 MP6M14 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss ? 20 ? 20 v continuous i d ? 8.0 ? 6a pulsed i dp ? 18 ? 18 a continuous i s 1.6 ? 1.6 a pulsed i sp 18 ? 18 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. symbol type source current (body diode) drain current parameter unit limits 1.4 150 power dissipation p d 2.0 ? 55 to ? 150 (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain *1 *1 *2 mpt6 (duel) (1) (2) (3) (6) (5) (4) ?2 ?2 ?1 ?1 (1) (2) (3) (6) (5) (4) ?1 esd protection diode ?2 body diode 1/10 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
MP6M14 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -1825 i d =8.0a, v gs =10v -2129 i d =8.0a, v gs =4.5v 23 32 i d =8.0a, v gs =4.0v forward transfer admittance l y fs l 4.5 - - s v ds =10v, i d =8.0a input capacitance c iss - 470 - pf v ds =10v output capacitance c oss - 170 - pf v gs =0v reverse transfer capacitance c rss - 80 - pf f=1mhz turn-on delay time t d(on) -8-nsv dd 15v, i d =4.0a rise time t r - 30 - ns v gs =10v turn-off delay time t d(off) - 39 - ns r l =3.75 ? fall time t f -9-nsr g =10 ? total gate charge q g - 7.3 - nc v dd 15v, i d =8.0a gate-source charge q gs - 1.5 - nc v gs =5v gate-drain charge q gd - 2.9 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =8.0a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds (on) m ? * 2/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M14 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -2738 i d = ? 6.0a, v gs = ? 10v -4056 i d = ? 3.0a, v gs = ? 4.5v -4664 i d = ? 3.0a, v gs = ? 4.0v forward transfer admittance l y fs l 4.0 - - s v ds = ? 10v, i d = ? 6.0a input capacitance c iss - 1040 - pf v ds = ? 10v output capacitance c oss - 160 - pf v gs =0v reverse transfer capacitance c rss - 135 - pf f=1mhz turn-on delay time t d(on) -9-nsv dd ? 15v, i d = ? 3.0a rise time t r - 15 - ns v gs = ? 10v turn-off delay time t d(off) - 96 - ns r l =5 ? fall time t f - 52 - ns r g =10 ? total gate charge q g - 10.4 - nc v dd ? 15v, i d = ? 6.0a gate-source charge q gs - 2.8 - nc v gs = ? 5v gate-drain charge q gd - 3.7 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 6.0a, v gs =0v *pulsed parameter conditions conditions m ? static drain-source on-state resistance r ds (on) parameter * * * * * * * * * * * * * * * * 3/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M14 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =2.8v v gs =3.0v v gs =4.5v v gs =4.0v t a =25 c pulsed 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.0v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v v gs =2.5v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 4/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M14 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 source current : is [a] source - drain voltage : v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 10 20 30 40 50 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d =8.0a i d =4.0a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 15v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =15v i d =8a pulsed 5/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M14 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) v gs = 10v p w = 100 s p w = 1ms p w = 10ms dc operation 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) 6/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M14 tr.2(pch) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v v gs = - 3.0v v gs = - 3.5v t a =25 c pulsed 0 1 2 3 4 5 6 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v v gs = - 3.0v v gs = - 3.5v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 4v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 7/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M14 0.1 1 10 100 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : - i d [a] fig.7 forward transfer admittance vs. drain current v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 100 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.8 typical transfer characteristics v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 source current : - i s [a] source - drain voltage : - v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 100 200 0 2 4 6 8 10 12 14 16 18 20 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : - v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d = - 6.0a i d = - 3.0a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 switching time : t [ns] drain current : - i d [a] fig.11 switching characteristics v dd P - 15v v gs = - 10v r g =10 t a =25 c pulsed t f t r t d(on) t d(off) 0 2 4 6 8 10 12 0 5 10 15 20 gate - source voltage : - v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd = - 15v i d = - 6.0a pulsed 8/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M14 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : - v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) 0.01 0.1 1 10 100 0.01 0.1 1 10 100 drain current : - i d [ a ] drain - source voltage : - v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse:1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = - 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 9/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M14 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 10/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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